Experimental identification of the doping deactivation mechanism in semiconductors: Application to nitrogen in ZnS0.06Se0.94
نویسندگان
چکیده
We show that quantitative information on the electrical deactivation of doping can be obtained by combining the results of positron annihilation, secondary ion-mass spectrometry, and capacitance-voltage measurements. By applying this method to study the N doping of ZnS0.06Se0.94 , we can conclude that the fraction of electrically inactive nitrogen may vary from 0% to 80%, depending strongly on the growth conditions. About 40% of the electrically active N exist in the isolated acceptor configuration NSe 2 and another 40% is bound to compensating donors, most probably to (ZniNSe) 11 and (VSeNSe) 11 pairs. Typically 20% forms negative (VSeNSe) 12 complexes with the Se vacancy. @S0163-1829~99!50620-6#
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